
Sentaurus Band Structure computes band-structure
(energy vs wave-vector or E-k relationship) for bulk crystalline solids,
and the sub-band structure of confined systems,
such as 1D inversion layers of bulk or SOI transistors, or 2D cross-sections of FinFETs
or Gate-All-Around (GAA) nanosheet/nanowire transistors. The sub-band structure
is obtained from the solution of the coupled Poisson-Schrödinger equations in the considered confined system.
In addition, it can calculate
the low-field mobility by solving the linearized Boltzmann Transport Equation (BTE).
This module is a basic introduction to the features of Sentaurus
Band Structure.
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